DocumentCode
2233825
Title
The origin of efficiency droop in GaN-based light-emitting diodes and its solution
Author
Kim, Jong Kyu ; Kim, Min-Ho ; Schubert, Martin F. ; Dai, Qi ; Sakong, Tan ; Yoon, Sukho ; Sone, Cheolsoo ; Park, YongJo ; Piprek, Joachim ; Schubert, E.Fred
Author_Institution
Syst. Eng. Dept., Rensselaer Polytech. Inst., Troy, NY
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
The physical origin of efficiency droop in GaN-based light-emitting diodes when driven with high current is systematically investigated. Based on our simulations and experimental results, a polarization-matched active region is proposed as the solution.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; wide band gap semiconductors; GaN; efficiency droop; light emitting diodes; polarization-matched active region; Electrons; Gallium nitride; Leakage current; Light emitting diodes; Optical polarization; Physics computing; Piezoelectric polarization; Quantum well devices; Systems engineering and theory; Voltage; (230.0250) Optoelectronics; (230.3670) Light-emitting diodes;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571359
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