Title :
Improving quantum efficiency with nanostructured semipolar III-nitride light emitters
Author :
Jung, Taeil ; Ku, P.C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
Abstract :
We demonstrated nanostructured semipolar III-nitride light emitters on low cost c-plane GaN templates using one-step epitaxy. The total light emission efficiency is improved by a factor of 2.6 compared to polar emitters at room temperature.
Keywords :
III-V semiconductors; gallium compounds; integrated optoelectronics; light emitting devices; nanoelectronics; nanostructured materials; semiconductor epitaxial layers; wide band gap semiconductors; GaN; low cost c-plane gallium nitride templates; nanostructured semipolar III-nitride light emitters; one-step epitaxy method; polar emitters comparison; quantum efficiency; temperature 293 K to 298 K; total light emission efficiency; Costs; Epitaxial growth; Gallium nitride; Light emitting diodes; Optical surface waves; Quantum well devices; Rough surfaces; Surface roughness; Surface treatment; Temperature; (220.4241) Nanostructure fabrication; (230.3670) Light-emitting diodes;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
