DocumentCode
2233885
Title
Improving quantum efficiency with nanostructured semipolar III-nitride light emitters
Author
Jung, Taeil ; Ku, P.C.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
We demonstrated nanostructured semipolar III-nitride light emitters on low cost c-plane GaN templates using one-step epitaxy. The total light emission efficiency is improved by a factor of 2.6 compared to polar emitters at room temperature.
Keywords
III-V semiconductors; gallium compounds; integrated optoelectronics; light emitting devices; nanoelectronics; nanostructured materials; semiconductor epitaxial layers; wide band gap semiconductors; GaN; low cost c-plane gallium nitride templates; nanostructured semipolar III-nitride light emitters; one-step epitaxy method; polar emitters comparison; quantum efficiency; temperature 293 K to 298 K; total light emission efficiency; Costs; Epitaxial growth; Gallium nitride; Light emitting diodes; Optical surface waves; Quantum well devices; Rough surfaces; Surface roughness; Surface treatment; Temperature; (220.4241) Nanostructure fabrication; (230.3670) Light-emitting diodes;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571361
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