Title :
The effects of scaling on the performance of small-signal MOS amplifiers: a physics-based simulation study
Author_Institution :
Ferrara Univ., Italy
Abstract :
Physics-based device simulation is applied to study the effects of scaling on the performance of small signal MOS amplifiers. The limitations set by non-ideal scaling of the electrical characteristics of the MOSFET and their implications on the trade-off between power dissipation and performance are analyzed and discussed
Keywords :
CMOS analogue integrated circuits; operational amplifiers; MOSFET electrical characteristic; OTA; amplifier performance; nonideal scaling; op amps; physics-based device simulation; power dissipation; scaling effects; small-signal MOS amplifiers; CMOS technology; Circuit simulation; Degradation; Doping; Electric variables; Frequency estimation; MOSFET circuits; Power MOSFET; Transconductance; Voltage;
Conference_Titel :
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location :
Geneva
Print_ISBN :
0-7803-5482-6
DOI :
10.1109/ISCAS.2000.856433
