DocumentCode
2233904
Title
The effects of scaling on the performance of small-signal MOS amplifiers: a physics-based simulation study
Author
Fiegna, Claudio
Author_Institution
Ferrara Univ., Italy
Volume
2
fYear
2000
fDate
2000
Firstpage
733
Abstract
Physics-based device simulation is applied to study the effects of scaling on the performance of small signal MOS amplifiers. The limitations set by non-ideal scaling of the electrical characteristics of the MOSFET and their implications on the trade-off between power dissipation and performance are analyzed and discussed
Keywords
CMOS analogue integrated circuits; operational amplifiers; MOSFET electrical characteristic; OTA; amplifier performance; nonideal scaling; op amps; physics-based device simulation; power dissipation; scaling effects; small-signal MOS amplifiers; CMOS technology; Circuit simulation; Degradation; Doping; Electric variables; Frequency estimation; MOSFET circuits; Power MOSFET; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location
Geneva
Print_ISBN
0-7803-5482-6
Type
conf
DOI
10.1109/ISCAS.2000.856433
Filename
856433
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