Title :
In-line inspection to wafer test correlation
Author :
Tomlinson, W. ; Jackson, F. ; St.Lawrence, M.A.
Author_Institution :
Microelectron. Div., IBM Corp., Essex Junction, VT, USA
Abstract :
A method for correlating optical in-line defects to electrically tested defects has been developed. Using this method, the validity of in-line defect categories and the possibility that they will cause a defect has been adjusted. This work was performed in one of two semiconductor fabricators at the IBM Microelectronics Division manufacturing facility in Essex Junction, Vermont
Keywords :
DRAM chips; inspection; integrated circuit testing; integrated circuit yield; production testing; IBM Microelectronics Division; electrically tested defects; in-line inspections; optical in-line defects; semiconductor fabricators; wafer test correlation; yield loss; Chemicals; Electron optics; Etching; Inspection; Joining processes; Microelectronics; Optical arrays; Scanning electron microscopy; Semiconductor device manufacture; Testing;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1996. ASMC 96 Proceedings. IEEE/SEMI 1996
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-3371-3
DOI :
10.1109/ASMC.1996.557980
