Title :
Effect of two-steps RTA on the properties of PSTT5 thin films
Author :
Sun, Yucheng ; Li, Xuedong ; Zhou, Yuanyuan ; Li, Haimin ; Zhu, Jiliang ; Liu, Hong ; Pei, Ying ; Xiao, Dingquan ; Zhu, Jianguo
Author_Institution :
Coll. of Mater. Sci. & Eng., Sichuan Univ., Chengdu, China
Abstract :
0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3 (PSTT5) ferroelectric thin films have been prepared by RF magnetron sputtering on LSCO/Pt/Ti/ SiO2/Si(100) substrates. A new two-steps rapid thermal annealing (TSRTA) was developed. TSRTA and conventional rapid thermal annealing (CRTA) were both used to anneal PSTT5 thin films. The XRD patterns shows that the PSTT5 thin films annealed by TSRTA would form pure perovskite structure and show highly (220) oriented. The ferroelectric measurements indicate that the PSTT5 thin films annealed by TSRTA possess better ferroelectric property. The 2Pr of the PSTT5 thin films annealed by TSRTA can be 25.4 muC/cm2.
Keywords :
X-ray diffraction; dielectric hysteresis; ferroelectric thin films; lanthanum compounds; lead compounds; platinum; rapid thermal annealing; silicon; silicon compounds; sputter deposition; strontium compounds; titanium compounds; (La0.5Sr0.5)CoO3-Pt-Ti-SiO2-Si; Pb(Sc0.5Ta0.5)O3-PbTiO3; RF magnetron sputtering; XRD; conventional rapid thermal annealing; ferroelectric measurements; ferroelectric property; ferroelectric thin films; hysteresis loops; perovskite structure; two-steps rapid thermal annealing; Buffer layers; Ferroelectric materials; Piezoelectric films; Pyroelectricity; Radio frequency; Rapid thermal annealing; Sputtering; Substrates; Temperature; Transistors; PSTT5; RF magnetron sputtering; RTA; thin films;
Conference_Titel :
Applications of Ferroelectrics, 2009. ISAF 2009. 18th IEEE International Symposium on the
Conference_Location :
Xian
Print_ISBN :
978-1-4244-4970-5
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2009.5307580
