• DocumentCode
    2234639
  • Title

    Wideband impedance matched GaInP/GaAs HBT Gilbert micromixer with 12 dB gain

  • Author

    Wang, Cheng-Yu ; Lu, Shey-Shi ; Meng, C.C.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    323
  • Lastpage
    326
  • Abstract
    A wideband GaInP/GaAs HBT micromixer with 12 dB conversion gain is demonstrated from DC to 9 GHz. Input P1dB of -4 dBm and IIP3 of 2 dBm are also achieved. The supply voltage is 5 V and the total quiescent current of the circuit is 5 mA including the bias circuit. The single-to-differential input stage in Gilbert micromixer renders good frequency response and eliminates the need for common mode rejection.
  • Keywords
    III-V semiconductors; MMIC mixers; bipolar MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; impedance matching; indium compounds; integrated circuit design; 0 to 9 GHz; 12 dB; 5 V; 5 mA; GaInP-GaAs; GaInP/GaAs HBT Gilbert micromixer; bias circuit; conversion gain; frequency response; impedance matched micromixer; single-to-differential input stage; wideband micromixer; Circuits; Frequency response; Gain; Gallium arsenide; Heterojunction bipolar transistors; Impedance; Mixers; Radio frequency; Transconductance; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC, 2002. Proceedings. 2002 IEEE Asia-Pacific Conference on
  • Print_ISBN
    0-7803-7363-4
  • Type

    conf

  • DOI
    10.1109/APASIC.2002.1031597
  • Filename
    1031597
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2234639