DocumentCode :
2234639
Title :
Wideband impedance matched GaInP/GaAs HBT Gilbert micromixer with 12 dB gain
Author :
Wang, Cheng-Yu ; Lu, Shey-Shi ; Meng, C.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2002
fDate :
2002
Firstpage :
323
Lastpage :
326
Abstract :
A wideband GaInP/GaAs HBT micromixer with 12 dB conversion gain is demonstrated from DC to 9 GHz. Input P1dB of -4 dBm and IIP3 of 2 dBm are also achieved. The supply voltage is 5 V and the total quiescent current of the circuit is 5 mA including the bias circuit. The single-to-differential input stage in Gilbert micromixer renders good frequency response and eliminates the need for common mode rejection.
Keywords :
III-V semiconductors; MMIC mixers; bipolar MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; impedance matching; indium compounds; integrated circuit design; 0 to 9 GHz; 12 dB; 5 V; 5 mA; GaInP-GaAs; GaInP/GaAs HBT Gilbert micromixer; bias circuit; conversion gain; frequency response; impedance matched micromixer; single-to-differential input stage; wideband micromixer; Circuits; Frequency response; Gain; Gallium arsenide; Heterojunction bipolar transistors; Impedance; Mixers; Radio frequency; Transconductance; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC, 2002. Proceedings. 2002 IEEE Asia-Pacific Conference on
Print_ISBN :
0-7803-7363-4
Type :
conf
DOI :
10.1109/APASIC.2002.1031597
Filename :
1031597
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2234639
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