Dielectric and electrical studies of SrBi2Nb1.9V0.1O9 ferroelectric ceramics

Author

Jain, Sameer ; Devi, Sheela ; Jha, A.K.

Author_Institution

Dept. of Appl. Phys., Delhi Coll. of Eng., Delhi, India

fYear

2009

fDate

23-27 Aug. 2009

Firstpage

1

Lastpage

5

Abstract

In the present work, effect of sintering temperature on structural, dielectric and electrical properties of vanadium substituted strontium bismuth niobate ferroelectric ceramics have been studied. Samples of composition SrBi₂Nb_1.9V_0.1O₉ were synthesized by solid-state reaction method at different sintering temperatures. X-ray diffraction analysis reveals the formation of perovskite structure. Peak dielectric constant is found to increase with increasing sintering temperature while Curie temperature is observed to be the highest in the sample sintered at 900degC and it decreases in the sample sintered at 1000degC. Impedance analysis of the samples was carried out to study the grain and the grain boundary effects. Cole-cole plots reveal a decrease in bulk resistance on increasing temperature indicating NTCR behavior.

Keywords

X-ray diffraction; crystal structure; dielectric losses; ferroelectric Curie temperature; ferroelectric ceramics; grain boundaries; permittivity; sintering; Curie temperature; SrBi₂Nb_1.9V_0.1O₉; X-ray diffraction analysis; cole-cole plots; dielectric constant; dielectric loss; dielectric properties; electrical properties; grain boundary effects; impedance analysis; perovskite structure; sintering temperature; solid-state reaction method; structural properties; temperature 1000 C; temperature 900 C; vanadium substituted strontium bismuth niobate ferroelectric ceramics; Bismuth; Ceramics; Dielectric constant; Ferroelectric materials; Impedance; Niobium compounds; Solid state circuits; Strontium; Temperature; X-ray diffraction; Curie temperature; Dielectric; Dielectric constant; Ferroelectrics;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2009. ISAF 2009. 18th IEEE International Symposium on the

Conference_Location

Xian

ISSN

1099-4734

Print_ISBN

978-1-4244-4970-5

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2009.5307608

Filename

5307608