DocumentCode
2234951
Title
The higher mode lasing scheme of 1.56μm Si-InGaAsP hybrid laser diode
Author
Leem, Y.A. ; Kim, K. ; Song, J.H. ; Kwon, O.K. ; Kim, G.
Author_Institution
Opt. Devices Group, Electron. & Telecommun. Res. Inst., Daejeon
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
A hybrid laser diode consisted of Si slab waveguide and III-V ridge waveguide has been investigated. This structure is efficient for enhancing the confinement factors in the silicon region and the III-V active region simultaneously.
Keywords
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; optical waveguides; ridge waveguides; semiconductor lasers; silicon; III-V active region; III-V ridge waveguide; Si-InGaAsP; confinement factors; higher mode lasing scheme; hybrid laser diode; silicon region; slab waveguide; wavelength 1.56 mum; Diode lasers; Electron optics; III-V semiconductor materials; Optical pumping; Optical surface waves; Optical waveguides; Pump lasers; Silicon; Slabs; Wafer bonding; (250.0250); (250.5960) General;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571406
Link To Document