• DocumentCode
    2235067
  • Title

    Time fractional derivative for frequency effect in ferroelectrics

  • Author

    Ducharne, B. ; Sebald, G. ; Guyomar, D.

  • Author_Institution
    Lab. de Genie Electr. et Ferroelectricite, INSA de Lyon, Villeurbanne, France
  • fYear
    2009
  • fDate
    23-27 Aug. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The present article proposes a dynamical model to obtain ferroelectric hysteresis dynamics based on fractional derivatives (Polarization versus Electric field curves). The consideration of a fractional derivative term widely increases the frequency bandwidth of the accuracy of the traditional hysteresis models. For PZT bulk ceramics, the order of the fractional derivative has been found to be 0.5 using experimental data as 10-3Hz<f<100Hz. For these excitation frequency levels, simulation tests provided good results regarding the comparison of the fractional model and experimental results. With the same set of parameters, it is possible to take into account the nonlinear behavior as f rarr 0: creep phenomenon, ageing ... Next, the model was tested on large frequency bandwidths (>6 decades) and validated with success using the comparison between simulation tests and the only experimental results available in literature obtained in such conditions by Liu and al (J. Phys.:Condens. Matter., 2004, vol.16, pp.1189-1195) for BNT thin film samples. At such frequency levels (>102Hz), due to power limitations, no ceramic bulk´s experimental results were available.
  • Keywords
    ageing; creep; dielectric hysteresis; dielectric polarisation; ferroelectric ceramics; lead compounds; PZT; PZT bulk ceramics; ageing; creep; excitation frequency; ferroelectric hysteresis dynamics; ferroelectric polarization; frequency effect; time fractional derivative; Aging; Bandwidth; Ceramics; Creep; Ferroelectric materials; Frequency; Hysteresis; Polarization; Testing; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2009. ISAF 2009. 18th IEEE International Symposium on the
  • Conference_Location
    Xian
  • ISSN
    1099-4734
  • Print_ISBN
    978-1-4244-4970-5
  • Electronic_ISBN
    1099-4734
  • Type

    conf

  • DOI
    10.1109/ISAF.2009.5307619
  • Filename
    5307619