DocumentCode :
2235174
Title :
Organic thin film transistors characteristics parameters, structures and their applications
Author :
Kumar, Brijesh ; Kaushik, B.K. ; Negi, Y.S. ; Mittal, Poornima ; Mandal, Amritakar
Author_Institution :
Indian Inst. of Technol., Roorkee, India
fYear :
2011
fDate :
22-24 Sept. 2011
Firstpage :
706
Lastpage :
711
Abstract :
The differences in drain current and drain voltage characteristics of top gate and bottom gate Organic Thin Film Transistor (OTFT) structures are analyzed by two dimensional numerical device simulators. Further discussion shows different characteristics parameters of OTFTs. Transistor based on organic semiconductor (conjugated or conducting polymers) as active layer to manage electric current flow is known as OTFTs. The performance parameters of OTFTs are evaluated from output and transfer characteristics of different structures of OTFTs. Device characteristics parameters have been evaluated in terms of drain current, mobility, on/off current ratio, threshold voltage, subthreshold slope and transconductance. OTFTs are considered as promising device for future development of their various applications in the areas of low-cost and large-area electronics. Further this paper thoroughly discusses the overall performance and applications of OTFTs in various fields.
Keywords :
organic semiconductors; thin film transistors; OTFT structures; drain current; drain current characteristics; drain voltage characteristics; electric current flow; large-area electronics; low-cost electronics; organic thin film transistor structures; subthreshold slope; subthreshold transconductance; transistor based on organic semiconductor; Electrodes; Logic gates; Organic thin film transistors; Pentacene; Performance evaluation; OTFT Structures and Performance Parameters; Organic Light Emitting Diode; Organic Thin Film Transistor (OTFT);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Recent Advances in Intelligent Computational Systems (RAICS), 2011 IEEE
Conference_Location :
Trivandrum
Print_ISBN :
978-1-4244-9478-1
Type :
conf
DOI :
10.1109/RAICS.2011.6069402
Filename :
6069402
Link To Document :
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