• DocumentCode
    2235332
  • Title

    THz quantum cascade lasers grown by low-pressure metalorganic vapor phase epitaxy

  • Author

    Sirigu, Lorenzo ; Rudra, Alok ; Amanti, Maria I. ; Scalari, Giacomo ; Fisher, Milan ; Giovannini, Marcella ; Faist, Jerome ; Kapon, Eli

  • Author_Institution
    Inst. of Microtechnol., Neuchatel Univ., Neuchatel
  • fYear
    2008
  • fDate
    4-9 May 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A terahertz quantum cascade laser (QCL) has been successfully grown by low-pressure MOVPE. Very high quality semiconductor interfaces are demonstrated as well as very promising lasing performance as compared to MBE-grown THz QCLs.
  • Keywords
    III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; optical fabrication; quantum cascade lasers; submillimetre wave lasers; vapour phase epitaxial growth; GaAs-Al0.15Ga0.85As; lasing temperatures; low-pressure metalorganic vapor phase epitaxy; semiconductor interfaces; terahertz quantum cascade laser; Doping; Epitaxial growth; Epitaxial layers; Laser transitions; Molecular beam epitaxial growth; Optical surface waves; Quantum cascade lasers; Surface morphology; Temperature; Vertical cavity surface emitting lasers; 040.4200; 140.3070; 140.5960; 140.5965;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-859-9
  • Type

    conf

  • Filename
    4571422
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2235332