DocumentCode :
2235332
Title :
THz quantum cascade lasers grown by low-pressure metalorganic vapor phase epitaxy
Author :
Sirigu, Lorenzo ; Rudra, Alok ; Amanti, Maria I. ; Scalari, Giacomo ; Fisher, Milan ; Giovannini, Marcella ; Faist, Jerome ; Kapon, Eli
Author_Institution :
Inst. of Microtechnol., Neuchatel Univ., Neuchatel
fYear :
2008
fDate :
4-9 May 2008
Firstpage :
1
Lastpage :
2
Abstract :
A terahertz quantum cascade laser (QCL) has been successfully grown by low-pressure MOVPE. Very high quality semiconductor interfaces are demonstrated as well as very promising lasing performance as compared to MBE-grown THz QCLs.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; optical fabrication; quantum cascade lasers; submillimetre wave lasers; vapour phase epitaxial growth; GaAs-Al0.15Ga0.85As; lasing temperatures; low-pressure metalorganic vapor phase epitaxy; semiconductor interfaces; terahertz quantum cascade laser; Doping; Epitaxial growth; Epitaxial layers; Laser transitions; Molecular beam epitaxial growth; Optical surface waves; Quantum cascade lasers; Surface morphology; Temperature; Vertical cavity surface emitting lasers; 040.4200; 140.3070; 140.5960; 140.5965;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
Type :
conf
Filename :
4571422
Link To Document :
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