DocumentCode
2235508
Title
Two-section InAs/InP quantum-dash passively mode locked lasers
Author
Rosales, R. ; Merghem, K. ; Martinez, A. ; Accard, A. ; Lelarge, F. ; Ramdane, A.
Author_Institution
Lab. for Photonics & Nanostruct., CNRS, Marcoussis, France
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
First observations of 2-section InAs/InP quantum-dash passive mode locking at 48 GHz are presented. Mode locking trends are compared to those of a 1 -section device and to the ones reported for InAs/GaAs quantum-dot lasers.
Keywords
III-V semiconductors; indium compounds; laser mode locking; quantum dash lasers; InAs-InP; two-section quantum-dash passively mode locked lasers; Gallium arsenide; Indium phosphide; Laser mode locking; Optical device fabrication; Optical pulses; Quantum dot lasers; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950434
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