• DocumentCode
    2235508
  • Title

    Two-section InAs/InP quantum-dash passively mode locked lasers

  • Author

    Rosales, R. ; Merghem, K. ; Martinez, A. ; Accard, A. ; Lelarge, F. ; Ramdane, A.

  • Author_Institution
    Lab. for Photonics & Nanostruct., CNRS, Marcoussis, France
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    First observations of 2-section InAs/InP quantum-dash passive mode locking at 48 GHz are presented. Mode locking trends are compared to those of a 1 -section device and to the ones reported for InAs/GaAs quantum-dot lasers.
  • Keywords
    III-V semiconductors; indium compounds; laser mode locking; quantum dash lasers; InAs-InP; two-section quantum-dash passively mode locked lasers; Gallium arsenide; Indium phosphide; Laser mode locking; Optical device fabrication; Optical pulses; Quantum dot lasers; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950434