Title :
Threshold current reduction and electrical modulation of degree of circular polarization in InAs/GaAs quantum dot spin-VCSELs
Author :
Basu, D. ; Wu, C.C. ; Saha, D. ; Mi, Z. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
Abstract :
Threshold current reduction and polarization modulation of an electrically injected spin-polarized VCSEL operating at 200 K have been investigated experimentally and theoretically.
Keywords :
electro-optical modulation; gallium arsenide; indium compounds; light polarisation; quantum dot lasers; spin polarised transport; surface emitting lasers; InAs-GaAs; InAs/GaAs quantum dot spin; VCSEL; circular polarization; electrical modulation; polarization modulation; spin polarization; temperature 200 K; threshold current reduction; Current measurement; Gallium arsenide; Laser theory; Magnetic field measurement; Optical polarization; Quantum dots; Quantum well lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; (140.5960) Semiconductor lasers; (140.7260) Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
