• DocumentCode
    2236036
  • Title

    Strategies for high energy ion implant

  • Author

    Kawski, James L. ; Borland, John Ogawa ; Connor, John P O

  • Author_Institution
    Genus Inc., Newburyport, MA, USA
  • fYear
    1996
  • fDate
    12-14 Nov 1996
  • Firstpage
    218
  • Abstract
    Summary form only given, as follows. Device Fab that employ High Energy (MeV)Ion Implant realize overall front end manufacturing cost reductions of up to 20%, For this reason MeV implant tools represent one of the fastest growing segments in the fab capital equipment market today. Implementing MeV implant into a process has new challenges for designers and process engineers alike. Process integration requires a logical strategy that fits a company´s relative aggressiveness in implementing significant cost reduction measures. Production process development and sustaining engineering require understanding of the tool specifics and unique process challenges associated with MeV implant. This paper discusses various cost reduction scenarios. There will be a review of production confirmed process migration and implementation
  • Keywords
    economics; integrated circuit manufacture; ion implantation; strategic planning; cost reduction measures; cost reduction scenarios; fab capital equipment market; front end manufacturing cost reductions; high energy ion implant; logical strategy; process challenges; process integration; process migration; tool specifics; Costs; Design engineering; Implants; Manufacturing processes; Power engineering and energy; Process design; Production; Pulp manufacturing; Semiconductor device manufacture;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference and Workshop, 1996. ASMC 96 Proceedings. IEEE/SEMI 1996
  • Conference_Location
    Cambridge, MA
  • ISSN
    1078-8743
  • Print_ISBN
    0-7803-3371-3
  • Type

    conf

  • DOI
    10.1109/ASMC.1996.558002
  • Filename
    558002