DocumentCode
2236036
Title
Strategies for high energy ion implant
Author
Kawski, James L. ; Borland, John Ogawa ; Connor, John P O
Author_Institution
Genus Inc., Newburyport, MA, USA
fYear
1996
fDate
12-14 Nov 1996
Firstpage
218
Abstract
Summary form only given, as follows. Device Fab that employ High Energy (MeV)Ion Implant realize overall front end manufacturing cost reductions of up to 20%, For this reason MeV implant tools represent one of the fastest growing segments in the fab capital equipment market today. Implementing MeV implant into a process has new challenges for designers and process engineers alike. Process integration requires a logical strategy that fits a company´s relative aggressiveness in implementing significant cost reduction measures. Production process development and sustaining engineering require understanding of the tool specifics and unique process challenges associated with MeV implant. This paper discusses various cost reduction scenarios. There will be a review of production confirmed process migration and implementation
Keywords
economics; integrated circuit manufacture; ion implantation; strategic planning; cost reduction measures; cost reduction scenarios; fab capital equipment market; front end manufacturing cost reductions; high energy ion implant; logical strategy; process challenges; process integration; process migration; tool specifics; Costs; Design engineering; Implants; Manufacturing processes; Power engineering and energy; Process design; Production; Pulp manufacturing; Semiconductor device manufacture;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 1996. ASMC 96 Proceedings. IEEE/SEMI 1996
Conference_Location
Cambridge, MA
ISSN
1078-8743
Print_ISBN
0-7803-3371-3
Type
conf
DOI
10.1109/ASMC.1996.558002
Filename
558002
Link To Document