Self-consistent optical gain analysis and epitaxy of strain-compensated InGaN-AlGaN quantum wells for laser applications

Author

Zhao, Hongping ; Arif, Ronald A. ; Huang, G.S. ; Ee, Yik-Khoon ; Tansu, Nelson

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

Self-consistent optical gain analysis of strain-compensated InGaN-AlGaN quantum wells (QWs) using 6-band kldrp formalism shows 28% improvement, which is suitable for laser active regions. MOCVD-grown strain-compensated InGaN QW exhibited 62.7% improvement in integrated luminescence intensity.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; wide band gap semiconductors; InGaN-AlGaN; MOCVD-grown strain-compensated QW; integrated luminescence intensity; laser active regions; laser applications; metalorganic chemical vapor deposition; self-consistent optical gain analysis; strain-compensated quantum wells; Aluminum gallium nitride; Biomedical optical imaging; Charge carrier density; Diode lasers; Epitaxial growth; Gallium nitride; Laser applications; Optical mixing; Quantum well lasers; Radiative recombination; (140.2020) Diode Lasers; (140.5960) Semiconductor Lasers; (230.5590) Quantum-Well Devices;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4571449