DocumentCode
2236121
Title
InGaN-GaNAs type-II ’W’ quantum well lasers for emission at 450-nm
Author
Arif, Ronald A. ; Zhao, Hongping ; Tansu, Nelson
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
Type-II InGaN-GaNAs quantum well gain media is analyzed for lasers emitting at 450-nm. Optical gain analysis, using 6-band k.p formalism, show 3-times improvement and 40% reduction in threshold current.
Keywords
III-V semiconductors; gallium compounds; indium compounds; k.p calculations; quantum well lasers; 6-band k.p formalism; InGaN-GaNAs; InGaN-GaNAs quantum well; optical gain analysis; threshold current; type-II W quantum well lasers; wavelength 450 nm; Biomedical optical imaging; Gallium nitride; Light emitting diodes; Optical devices; Optical films; Optical mixing; Piezoelectric polarization; Quantum well lasers; Semiconductor lasers; Stimulated emission; (140.2020) Diode Lasers; (140.5960) Semiconductor Lasers; (230.5590) Quantum-Well Devices;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571451
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