Title :
InGaN-GaNAs type-II ’W’ quantum well lasers for emission at 450-nm
Author :
Arif, Ronald A. ; Zhao, Hongping ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
Abstract :
Type-II InGaN-GaNAs quantum well gain media is analyzed for lasers emitting at 450-nm. Optical gain analysis, using 6-band k.p formalism, show 3-times improvement and 40% reduction in threshold current.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; k.p calculations; quantum well lasers; 6-band k.p formalism; InGaN-GaNAs; InGaN-GaNAs quantum well; optical gain analysis; threshold current; type-II W quantum well lasers; wavelength 450 nm; Biomedical optical imaging; Gallium nitride; Light emitting diodes; Optical devices; Optical films; Optical mixing; Piezoelectric polarization; Quantum well lasers; Semiconductor lasers; Stimulated emission; (140.2020) Diode Lasers; (140.5960) Semiconductor Lasers; (230.5590) Quantum-Well Devices;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
