DocumentCode
2236416
Title
Temperature Characteristics of Threshold Voltage in Single Material Double Workfunction Gate(SMDWG) MOSFET
Author
Liu Xin ; Dai Yuehua ; Chen Junning ; Li Junsheng
Author_Institution
Electron. Sci. & Technol. Dept., Anhui Universityline, Hefei, China
fYear
2009
fDate
26-28 Dec. 2009
Firstpage
5173
Lastpage
5176
Abstract
The effects of temperature on threshold voltage are studied in Single Material Double Workfunction Gate (SMDWG) MOSFET, and an analytical temperature model of threshold voltage is presented. Comparisons are carried out between the model calculated results and the MEDICI simulation results at wide temperature range from 200K to 500 K. The good agreements validate the new model.
Keywords
MOSFET; semiconductor device models; work function; MEDICI simulation; MOSFET; single material double work function gate; temperature 200 K to 500 K; temperature characteristics; threshold voltage; CMOS technology; Information science; Inorganic materials; MOSFET circuits; Poisson equations; Power engineering and energy; Silicon; Substrates; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Information Science and Engineering (ICISE), 2009 1st International Conference on
Conference_Location
Nanjing
Print_ISBN
978-1-4244-4909-5
Type
conf
DOI
10.1109/ICISE.2009.1159
Filename
5455678
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