Title :
Physical Degradation Characterization of Thin Film Resistors
Author_Institution :
TriQuint Semicond. Inc., Hillsboro, OR
Abstract :
Purpose -Previous work on degradation of NiCr resistors utilized within compound semiconductor integrated circuits has built an expectation of cause and effect between applied stresses and resulting appearance of resistor elements. This work investigates various stress conditions and provides additional data on the physical appearance of degraded resistors. very thin line of damage located in the very center of the resistor, bridging from side-to-side and severing resistance from end-to-end.
Keywords :
thin film resistors; compound semiconductor integrated circuits; degraded resistors; physical degradation characterization; thin film resistors; Current density; Degradation; Electrostatic discharge; Resistors; Semiconductor thin films; Stress; Temperature; Testing; Thin film circuits; Transistors;
Conference_Titel :
ROCS Workshop, 2007.[Reliability of Compound Semiconductors Digest]
Conference_Location :
Portland, OR
Print_ISBN :
978-0-7908-0115-5
DOI :
10.1109/ROCS.2007.4391065
