Title :
Silicon Evanescent Amplifiers
Author :
Bowers, John E. ; Park, Hyundai ; Kuo, Ying-hao ; Fang, Alexander W. ; Jones, Richard ; Paniccia, Mario J. ; Cohen, Oded ; Raday, Omri
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California Santa Barbara, Santa Barbara, CA
Abstract :
Optical amplifiers are important elements of photonic integrated circuits. We present a hybrid silicon evanescent amplifier utilizing a wafer bonded structure of silicon waveguide and AlGaInAs quantum wells. A chip gain of 13 dB with a power penalty of 0.5 dB at 40 Gb/s data amplification is demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; elemental semiconductors; gallium compounds; indium compounds; integrated optics; optical fibre amplifiers; quantum well devices; semiconductor devices; semiconductor quantum wells; silicon; wafer bonding; AlGaInAs; chip gain; data amplification; optical amplifiers; photonic integrated circuits; power penalty; quantum wells; silicon evanescent amplifiers; silicon waveguide; wafer bonded structure; Gain; Integrated optics; Optical amplifiers; Optical surface waves; Optical waveguides; Photonic integrated circuits; Semiconductor optical amplifiers; Silicon; Stimulated emission; Wafer bonding;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391086
