Fabrication of photonic crystal light-emitting diode with photoelectrochemical wet etching and phase mask interference

Author

Chen, Cheng-Yen ; Lin, Cheng-Hung ; Yeh, Dong-Ming ; Lu, Chih-Feng ; Huang, Chi-Feng ; Yang, C.C.

Author_Institution

Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

We demonstrate the high light-extraction efficiency by using the photoelectrochemical etching technique for forming photonic crystal structures on an InGaN/GaN quantum-well light-emitting diode through phase-mask interference. More than 90% increase of output power is observed.

Keywords

III-V semiconductors; etching; gallium compounds; indium compounds; integrated optics; light emitting diodes; photoelectrochemistry; photonic crystals; quantum well devices; wide band gap semiconductors; InGaN-GaN; LED fabrication; light-extraction efficiency; phase mask interference; photoelectrochemical wet etching; photonic crystal light-emitting diode; photonic crystal structure; quantum-well light-emitting diode; Fabrication; Gratings; Interference; Light emitting diodes; Optical scattering; Optical surface waves; Photonic crystals; Quantum well devices; Rough surfaces; Wet etching; 230.3670 Light-emitting diodes; 230.5590 Quantum-well devices;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4571486