DocumentCode :
2237015
Title :
Sub-wavelength plasmonic mode confinement in semiconductor-gap-dielectric waveguide in THz range
Author :
Haroyan, Hovhannes ; Avetisyan, Yuri ; Tonouchi, Masayoshi
Author_Institution :
Microwave Eng. Dept., Yerevan State Univ., Yerevan, Armenia
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
We have investigated the dispersion relation of novel semiconductor-gap-dielectric waveguide in terahertz range. It is shown that InSb-SiO2-Si structure supports strongly confined guided mode with area of 6.6 x 10-5 λ2 at 1 THz.
Keywords :
III-V semiconductors; dispersion relations; elemental semiconductors; indium compounds; microwave photonics; optical waveguides; semiconductor-insulator-semiconductor structures; silicon; silicon compounds; InSb-SiO2-Si; InSb-SiO2-Si structure; confined guided mode; dispersion relation; frequency 1 THz; semiconductor-gap-dielectric waveguide; subwavelength plasmonic mode confinement; Dielectrics; Metals; Optical surface waves; Optical waveguides; Plasmons; Semiconductor waveguides; Surface waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950494
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2237015
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