• DocumentCode
    2237015
  • Title

    Sub-wavelength plasmonic mode confinement in semiconductor-gap-dielectric waveguide in THz range

  • Author

    Haroyan, Hovhannes ; Avetisyan, Yuri ; Tonouchi, Masayoshi

  • Author_Institution
    Microwave Eng. Dept., Yerevan State Univ., Yerevan, Armenia
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have investigated the dispersion relation of novel semiconductor-gap-dielectric waveguide in terahertz range. It is shown that InSb-SiO2-Si structure supports strongly confined guided mode with area of 6.6 x 10-5 λ2 at 1 THz.
  • Keywords
    III-V semiconductors; dispersion relations; elemental semiconductors; indium compounds; microwave photonics; optical waveguides; semiconductor-insulator-semiconductor structures; silicon; silicon compounds; InSb-SiO2-Si; InSb-SiO2-Si structure; confined guided mode; dispersion relation; frequency 1 THz; semiconductor-gap-dielectric waveguide; subwavelength plasmonic mode confinement; Dielectrics; Metals; Optical surface waves; Optical waveguides; Plasmons; Semiconductor waveguides; Surface waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950494
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2237015