• DocumentCode
    2237120
  • Title

    Stabilization of resistive switching with controllable self-compliant Ta2O5-based RRAM

  • Author

    Chen, W.S. ; Wu, T.Y. ; Yang, S.Y. ; Liu, W.H. ; Lee, H.Y. ; Chen, Y.S. ; Tsai, C.H. ; Gu, P.Y. ; Tsai, K.H. ; Chen, Patrick S. ; Wei, H.W. ; Chen, Patrick S. ; Wang, Y.H. ; Chen, F.T. ; Tsai, Mavis

  • Author_Institution
    Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan
  • fYear
    2012
  • fDate
    23-25 April 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Ta/Ta2O5 RRAMs show self-compliant characteristics in some Ta or Ta2O5 thickness range but Ti/TaOx RRAMs always need current compliance due to totally consumption of SC conduction layer.
  • Keywords
    random-access storage; tantalum; tantalum compounds; RRAM; SC conduction layer; Ta-Ta2O5; current compliance; resistive switching; self-compliant characteristics; stabilization; Alloying; Electric variables; Electrodes; Materials; Temperature; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1930-8868
  • Print_ISBN
    978-1-4577-2083-3
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2012.6210099
  • Filename
    6210099
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2237120