Near-infrared Near-field Imaging Spectroscopy of Localized Electronic States due to Composition Fluctuation in GaInNAs Quantum Wells

Author

Kubota, R. ; Nakashima, Kazuto ; Mizuno, D. ; Saiki, T. ; Sakai, M. ; Matsuda, K. ; Ishizuka, T.

Author_Institution

Keio Univ., Yokohama

fYear

2007

fDate

26-31 Aug. 2007

Firstpage

1

Lastpage

2

Abstract

Near-field photoluminescence spectroscopy of a GalnNAs quantum well with a spatial resolution of 50-150 nm (lambda/20- lambda/8) was performed to visualize the bandgap fluctuation, which reflects the nonuniform distribution of N and In atoms. We quantitatively estimate the real-space potential profile and fluctuation of N concentration in combination with numerically solving Schrodinger equation.

Keywords

III-V semiconductors; Schrodinger equation; energy gap; fluctuations; gallium arsenide; gallium compounds; indium compounds; infrared imaging; infrared spectra; photoluminescence; semiconductor quantum wells; GaInAsJk; GalnNAs quantum wells; Near-field photoluminescence spectroscopy; Schrodinger equation; bandgap fluctuation; composition fluctuation; localized electronic states; near-field imaging spectroscopy; near-infrared imaging; near-infrared spectroscopy; nitrogen concentration; real-space potential profile; Atom optics; Atomic beams; Fluctuations; Optical imaging; Optical microscopy; Photoluminescence; Photonic band gap; Schrodinger equation; Spatial resolution; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on

Conference_Location

Seoul

Print_ISBN

978-1-4244-1173-3

Electronic_ISBN

978-1-4244-1174-0

Type

conf

DOI

10.1109/CLEOPR.2007.4391097

Filename

4391097