Title :
Suppressed soft-errors and highly reduced current for HfOX based unipolar RRAM by inserting AlOX layer
Author :
Chen, Yu-Sheng ; Lee, Heng-Yuan ; Chen, Pang-Shiu ; Tsai, Kan-Hsueh ; Wu, Tai-Yuan ; Chen, Wei-Su ; Tsai, Chen-Han ; Gu, Pei-Yi ; Liao, Yi-Ying ; Chen, Frederick ; Lien, Chen-Hsin ; Tsai, Ming-Jinn
Abstract :
Compared with the Ni/HfOX device, the Ni/AlOX/HfOX unipolar device exhibits a higher RHIGH and the robust endurance of 10k cycles without any soft-errors. A possible mechanism with filament model is proposed to describe these results. The high operation speed of 40 ns, low operation current possibly down to 10 μA, and stable nonvolatile characteristic at 85 °C in the Ni/AlOX/HfOX device are demonstrated to realize the device to be the next generation nonvolatile memory.
Keywords :
aluminium compounds; hafnium compounds; nickel; radiation hardening (electronics); random-access storage; Ni-AlOX-HfOX; current 10 muA; highly reduced current; nonvolatile characteristic; nonvolatile memory; suppressed soft error; temperature 85 C; unipolar RRAM; unipolar device; Hafnium oxide; Nickel; Nonvolatile memory; Resistance; Switches; Tin;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2083-3
DOI :
10.1109/VLSI-TSA.2012.6210100
