DocumentCode :
2237164
Title :
Modeling and tuning the filament properties in RRAM metal oxide stacks for optimized stable cycling
Author :
Degraeve, R. ; Goux, L. ; Clima, S. ; Govoreanu, B. ; Chen, Y.Y. ; Kar, G.S. ; Rousse, P. ; Pourtois, G. ; Wouters, D.J. ; Altimime, L. ; Jurczak, M. ; Groeseneken, G. ; Kittl, J.A.
Author_Institution :
ESAT Dept., imec, Leuven, Belgium
fYear :
2012
fDate :
23-25 April 2012
Firstpage :
1
Lastpage :
2
Abstract :
Forming current Iform is a crucial parameter for stable cycling in a HfO2 RRAM stack. (i) Too low Iform results in constriction `elongation´ for filament current reduction during reset, quickly leading to failure. (ii) Too high and unlimited Iform leads to poor control of the filament nature expressed as a wide V0-distribution in the QPC model. (iii) In between, Iform is directly correlated to the minimal achievable HRS current and a narrow, stable filament is formed which allows for device scaling as well as multi-level programming.
Keywords :
failure analysis; hafnium compounds; random-access storage; scaling circuits; HRS current; HfO2; RRAM metal oxide stacks; device scaling; failure; filament current reduction; filament properties tuning; multilevel programming; optimized stable cycling; Current measurement; Dielectrics; Energy states; Hafnium compounds; Tin; Transistors; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1930-8868
Print_ISBN :
978-1-4577-2083-3
Type :
conf
DOI :
10.1109/VLSI-TSA.2012.6210101
Filename :
6210101
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2237164
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