Superior filament formation control in HfO2 based RRAM for high-performance low-power operation of 1 µA to 20 µA at +/− 1V

Low operation current and voltage range are required for scaled low power RRAM devices in high density memory cell arrays. In this work, for the first time we demonstrate 1 uA, +/- 1V bipolar switching of TiN/HfO_x/Zr/W RRAM devices. High switching performance up to 10⁸ cycles at low power and a 100× reduction of the high-resistance-state current was achieved by identification and utilization of key parameters for establishing superior control of the conductive filament formation.