Title :
Peak power from 60-μm broad area single emitter limited to 50-W by carrier escape
Author :
Pietrzak, A. ; Crump, P. ; Staske, R. ; Wenzel, H. ; Erbert, G. ; Trankle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Forschungsverbund Berlin e.V., Berlin
Abstract :
Passivated 1100-nm broad area lasers reach maximum power of 50-W from a 60-mum stripe under short pulse conditions. Simulations predict and spontaneous emission measurements confirm power is limited by carrier escape from the active region.
Keywords :
passivation; semiconductor lasers; spontaneous emission; broad area lasers; broad area single emitter; carrier escape; diode lasers; power 50 W; size 60 mum; spontaneous emission; wavelength 1100 nm; wavelength 60 mum; Current measurement; Optical pulses; Optical pumping; Power lasers; Power measurement; Pulse amplifiers; Pulse measurements; Space vector pulse width modulation; Testing; Wavelength measurement; (140.5960) Semiconductor lasers; (250.5590) Quantum-well, -wire and -dot devices;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
