Transition to EUV lithography

Today´s materials and tool infrastructure is supporting EUVL for pilot line applications with industry efforts focused on addressing the remaining challenges to introduce EUV into HVM at the 22 nm half-pitch in 2014/15. Ensuring EUV extendibility to the sub-16 nm half-pitch will require additional efforts, such as enabling the research and development tools to support the materials development for next generation EUV resist and EUV mask technology. SEMATECH is leading this industry effort. With the introduction of EUVL, SEMATECH´s lithography focus is shifting towards addressing the challenges for patterning at the ≤ 10 nm half-pitch.