Title :
Transition of memory technologies
Author :
Kim, SangBum ; Lam, Chung H.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Historically, transition of memory technologies has been enabled by not only disruptive new features of the memory technology but also new applications which proved the core value of those new features. As improvement of prevalent memory technologies is becoming more challenging, many resources have been devoted to development of emerging memory technologies. In this regard, characteristics of emerging memory technologies such as PCM, STT-MRAM, and RRAM will be reviewed to evaluate its potential of becoming transformational memory technology.
Keywords :
flash memories; random-access storage; PCM; RRAM; STT-MRAM; prevalent memory technology; transformational memory technology; Bandwidth; Flash memory; Phase change materials; Phase change memory; Random access memory; Resistance;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2083-3
DOI :
10.1109/VLSI-TSA.2012.6210112
