DocumentCode
2237401
Title
Transition of memory technologies
Author
Kim, SangBum ; Lam, Chung H.
Author_Institution
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2012
fDate
23-25 April 2012
Firstpage
1
Lastpage
3
Abstract
Historically, transition of memory technologies has been enabled by not only disruptive new features of the memory technology but also new applications which proved the core value of those new features. As improvement of prevalent memory technologies is becoming more challenging, many resources have been devoted to development of emerging memory technologies. In this regard, characteristics of emerging memory technologies such as PCM, STT-MRAM, and RRAM will be reviewed to evaluate its potential of becoming transformational memory technology.
Keywords
flash memories; random-access storage; PCM; RRAM; STT-MRAM; prevalent memory technology; transformational memory technology; Bandwidth; Flash memory; Phase change materials; Phase change memory; Random access memory; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location
Hsinchu
ISSN
1930-8868
Print_ISBN
978-1-4577-2083-3
Type
conf
DOI
10.1109/VLSI-TSA.2012.6210112
Filename
6210112
Link To Document