Title :
Z2-FET: A zero-slope switching device with gate-controlled hysteresis
Author :
Wan, J. ; Royer, C. Le ; Zaslavsky, A. ; Cristoloveanu, S.
Author_Institution :
IMEP-LAHC, INP-Grenoble, Grenoble, France
Abstract :
We present a novel switching device named Z2-FET that features zero subthreshold swing and zero impact ionization. The device is built in fully-depleted silicon-on-insulator (FD-SOI) technology and is demonstrated to switch sharply with the subthreshold slope (SS) <; 1 mV/dec and an ION/IOFF current ratio >; 1010. The device further shows large hysteresis in drain current-drain voltage (ID-VD) domain with the turn-on voltage (VON) linearly controlled by gate voltage (VG). Simulation confirms that the operation of the device is determined by the positive feedback between the flow of carriers and their injection barriers.
Keywords :
field effect transistors; hysteresis; impact ionisation; silicon-on-insulator; FD-SOI technology; Si; Z2-FET; carrier flow; current ratio; drain current-drain voltage domain; fully-depleted silicon-on-insulator technology; gate voltage; gate-controlled hysteresis; injection barrier; positive feedback; subthreshold slope; turn-on voltage; zero-impact ionization; zero-slope switching device; zero-subthreshold swing; Dielectrics; Electron traps; Hafnium compounds; Logic gates; MOSFET circuits; Stress; Switches;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2083-3
DOI :
10.1109/VLSI-TSA.2012.6210113
