Title :
Progress in wide bandgap semiconductor SiC for power devices
Author :
Matsunami, Hiroyulu
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
Abstract :
The progress in SiC crystal growth of bulk and epitaxial layers for power devices is reviewed. Current status in device processes is introduced. Then, the state-of-the-art SiC power devices are described. “On-resistance” in vertical power MOSFETs which determines the power loss is discussed, and recent progress in SiC MOSFET performance is presented by improving channel mobilities
Keywords :
carrier mobility; power MOSFET; silicon compounds; wide band gap semiconductors; SiC; bulk crystal growth; channel mobility; epitaxial growth; on-resistance; power device; silicon carbide; vertical power MOSFET; wide bandgap semiconductor; Crystals; Doping; Epitaxial growth; Epitaxial layers; Inductors; MOSFETs; Silicon carbide; Temperature dependence; Thermal conductivity; Wide band gap semiconductors;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856762
