Title :
A review of RESURF technology
Author :
Ludikhuize, Adriaan W.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
RESURF (Reduced Surface Field) technology is one of the most widely-used methods for the design of lateral high-voltage, low on-resistance devices. The technique has allowed the integration of HV devices, ranging from 20 V to 1200 V, with bipolar and MOS transistors. A technical review is given on the technology as developed during the last 20 years. The paper discusses the invention and its application in discrete devices, in Junction-Isolated IC´s and SOI, and as Multiple Resurf. It includes an evaluation of topics like breakdown, on-resistance, high-side and high-current effects and reliability
Keywords :
isolation technology; power semiconductor devices; 20 to 1200 V; MOS transistor; Multiple Resurf; RESURF technology; SOI; bipolar transistor; breakdown voltage; discrete device; junction isolated IC; lateral high-voltage device; on-resistance; reliability; Application specific integrated circuits; CMOS technology; Design methodology; Displays; Electric breakdown; Epitaxial growth; Epitaxial layers; MOSFETs; Semiconductor diodes; Substrates;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856763
