A review of RESURF technology

Author

Ludikhuize, Adriaan W.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

2000

fDate

2000

Firstpage

11

Lastpage

18

Abstract

RESURF (Reduced Surface Field) technology is one of the most widely-used methods for the design of lateral high-voltage, low on-resistance devices. The technique has allowed the integration of HV devices, ranging from 20 V to 1200 V, with bipolar and MOS transistors. A technical review is given on the technology as developed during the last 20 years. The paper discusses the invention and its application in discrete devices, in Junction-Isolated IC´s and SOI, and as Multiple Resurf. It includes an evaluation of topics like breakdown, on-resistance, high-side and high-current effects and reliability

Keywords

isolation technology; power semiconductor devices; 20 to 1200 V; MOS transistor; Multiple Resurf; RESURF technology; SOI; bipolar transistor; breakdown voltage; discrete device; junction isolated IC; lateral high-voltage device; on-resistance; reliability; Application specific integrated circuits; CMOS technology; Design methodology; Displays; Electric breakdown; Epitaxial growth; Epitaxial layers; MOSFETs; Semiconductor diodes; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Conference_Location

Toulouse

ISSN

1063-6854

Print_ISBN

0-7803-6269-1

Type

conf

DOI

10.1109/ISPSD.2000.856763

Filename

856763