Title :
IEGT design concept against operation instability and its impact to application
Author :
Omura, Ichiro ; Demon, T. ; Miyanagi, Toshiyuki ; Ogura, Tsuneo ; Ohashi, Hiromichi
Author_Institution :
Semicond. Co., Toshiba Corp., Kawasaki, Japan
Abstract :
IEGT´s (Injection Enhanced Gate transistors) and HV-IGBT´s are inherently unstable inducing harmful current crowding and oscillation among paralleled chips or packages. The instability problem has become crucial in device design and application. This paper will describe the mechanism of the instability and propose effective solutions for device and package design against the problem
Keywords :
insulated gate bipolar transistors; power MOSFET; HV-IGBT; IEGT; current crowding; device design; injection enhanced gate transistor; instability; oscillation; Capacitance; Cathodes; Charge measurement; Current measurement; Electrons; MOS devices; Proximity effect; Research and development; Semiconductor device packaging; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856765
