Title :
A high voltage IGBT and diode chip set designed for the 2.8 kV DC link level with short circuit capability extending to the maximum blocking voltage
Author :
Bauer, Friedhelm ; Kaminski, Nando ; Linder, Stefan ; Zeller, Hansruedi
Author_Institution :
ABB Semicond. AG, Lenzburg, Switzerland
Abstract :
This paper presents the experimental characteristics of a high voltage IGBT and diode chip set designed for safe operation under hard switching conditions at the 2.8 kV DC link level. The fundamental goal of the design is a low cosmic ray induced failure rate for diodes as well as IGBTs at the DC link level. At the same time all the common requirements of low static and dynamic losses as well as wide SOA under turn-off, reverse recovery and short-circuit conditions are fulfilled. The blocking capability of these devices exceeds 4.5 kV by far
Keywords :
cosmic ray interactions; insulated gate bipolar transistors; power semiconductor diodes; power semiconductor switches; power transistors; 2.8 kV; DC link voltage; blocking voltage; cosmic ray irradiation; diode chip set; dynamic loss; failure rate; hard switching; high voltage IGBT; reverse recovery; safe operation area; short circuit capability; static loss; Cathodes; Failure analysis; Insulated gate bipolar transistors; Inverters; Semiconductor diodes; Semiconductor optical amplifiers; Silicon; Switching circuits; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856766
