A high voltage IGBT and diode chip set designed for the 2.8 kV DC link level with short circuit capability extending to the maximum blocking voltage

Author

Bauer, Friedhelm ; Kaminski, Nando ; Linder, Stefan ; Zeller, Hansruedi

Author_Institution

ABB Semicond. AG, Lenzburg, Switzerland

fYear

2000

fDate

2000

Firstpage

29

Lastpage

32

Abstract

This paper presents the experimental characteristics of a high voltage IGBT and diode chip set designed for safe operation under hard switching conditions at the 2.8 kV DC link level. The fundamental goal of the design is a low cosmic ray induced failure rate for diodes as well as IGBTs at the DC link level. At the same time all the common requirements of low static and dynamic losses as well as wide SOA under turn-off, reverse recovery and short-circuit conditions are fulfilled. The blocking capability of these devices exceeds 4.5 kV by far

Keywords

cosmic ray interactions; insulated gate bipolar transistors; power semiconductor diodes; power semiconductor switches; power transistors; 2.8 kV; DC link voltage; blocking voltage; cosmic ray irradiation; diode chip set; dynamic loss; failure rate; hard switching; high voltage IGBT; reverse recovery; safe operation area; short circuit capability; static loss; Cathodes; Failure analysis; Insulated gate bipolar transistors; Inverters; Semiconductor diodes; Semiconductor optical amplifiers; Silicon; Switching circuits; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Conference_Location

Toulouse

ISSN

1063-6854

Print_ISBN

0-7803-6269-1

Type

conf

DOI

10.1109/ISPSD.2000.856766

Filename

856766