DocumentCode :
2237716
Title :
Excellent resistive switching memory: Influence of GeOx in WOx mixture
Author :
Rahaman, S.Z. ; Maikap, S. ; Chen, W.S. ; Tien, T.C. ; Lee, H.Y. ; Chen, F.T. ; Kao, M. -J ; Tsai, M. -J
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear :
2012
fDate :
23-25 April 2012
Firstpage :
1
Lastpage :
2
Abstract :
Influence of GeOx layer on resistive switching memory performance in a simple and CMOS compatible W/WOx/GeOx:WOx mixture/W structure has been investigated for the first time. All layers are confirmed by both HRTEM and XPS. This memory device has enhanced performance in terms of the resistance ratio, uniformity, and program/erase cycles as compared to W/WOx/W structure. An excellent read endurance and program/erase cycles of >;106 at large Vread of ±1V are obtained. Furthermore, the memory device exhibits robust data retention at 85°C. This device can be operated as low current as 0.1 μA.
Keywords :
CMOS memory circuits; germanium compounds; tungsten; tungsten compounds; CMOS; HRTEM; W-WOx-GeOx:WOx; XPS; program-erase cycle; read endurance; resistance ratio; resistive switching memory; CMOS integrated circuits; Nanoscale devices; Performance evaluation; Resistance; Sputtering; Switches; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1930-8868
Print_ISBN :
978-1-4577-2083-3
Type :
conf
DOI :
10.1109/VLSI-TSA.2012.6210124
Filename :
6210124
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2237716
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