DocumentCode :
2237722
Title :
4.5 kV-2000 A Power Pack IGBT (ultra high power flat-packaged PT type RC-IGBT)
Author :
Fujii, Takeshi ; Yoshikawa, Koh ; Koga, Takeharu ; Nishiura, Akira ; Takahashi, Yoshikazu ; Kakiki, Hideaki ; Ichijyou, Masami ; Seki, Yasukazu
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan
fYear :
2000
fDate :
2000
Firstpage :
33
Lastpage :
36
Abstract :
A 4.5 kV-2000 A Power Pack IGBT (Flat-Packaged Reverse Conducting IGBT) has been developed by use of the PT (Punch-Through) type IGBT chip, the uniform chip parallel connection in the square ceramic package and the advanced multi-collector structure. The high turn off capability of 4500 A (@VCC=2600 V, Tj=125°C) and the short circuit capability of over 15 μs (@VCC=3000 V, Tj=125°C) are successfully achieved
Keywords :
ceramic packaging; insulated gate bipolar transistors; power transistors; semiconductor device packaging; 2000 A; 4.5 kV; Power Pack IGBT; ceramic flat package; multi-collector structure; ultra-high-power punchthrough-type RC-IGBT chip; Bipolar transistors; Ceramics; Circuits; Insulated gate bipolar transistors; Packaging; Production facilities; Research and development; Thyristors; Uninterruptible power systems; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
ISSN :
1063-6854
Print_ISBN :
0-7803-6269-1
Type :
conf
DOI :
10.1109/ISPSD.2000.856767
Filename :
856767
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2237722
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