4.5 kV-2000 A Power Pack IGBT (ultra high power flat-packaged PT type RC-IGBT)

Author

Fujii, Takeshi ; Yoshikawa, Koh ; Koga, Takeharu ; Nishiura, Akira ; Takahashi, Yoshikazu ; Kakiki, Hideaki ; Ichijyou, Masami ; Seki, Yasukazu

Author_Institution

Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan

fYear

2000

fDate

2000

Firstpage

33

Lastpage

36

Abstract

A 4.5 kV-2000 A Power Pack IGBT (Flat-Packaged Reverse Conducting IGBT) has been developed by use of the PT (Punch-Through) type IGBT chip, the uniform chip parallel connection in the square ceramic package and the advanced multi-collector structure. The high turn off capability of 4500 A (@V_CC=2600 V, T_j=125°C) and the short circuit capability of over 15 μs (@V_CC=3000 V, T_j=125°C) are successfully achieved

Keywords

ceramic packaging; insulated gate bipolar transistors; power transistors; semiconductor device packaging; 2000 A; 4.5 kV; Power Pack IGBT; ceramic flat package; multi-collector structure; ultra-high-power punchthrough-type RC-IGBT chip; Bipolar transistors; Ceramics; Circuits; Insulated gate bipolar transistors; Packaging; Production facilities; Research and development; Thyristors; Uninterruptible power systems; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Conference_Location

Toulouse

ISSN

1063-6854

Print_ISBN

0-7803-6269-1

Type

conf

DOI

10.1109/ISPSD.2000.856767

Filename

856767