Title :
CW Sub-Terahertz wave generation by GaAs:O Materials
Author :
Chen, Kejian ; Li, Yutai ; Cheung, WingYiu ; Wang, Weiwen ; Pan, CiLing ; Chan, KamTai
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Hong Kong
Abstract :
Oxygen implanted GaAs was used for terahertz wave emitter fabrication. CW terahertz waves are measured from this kind of material. We take sampling in the range of 0.25 to 0.5 THz. The measured output power is in ten nW range.
Keywords :
III-V semiconductors; dipole antennas; gallium arsenide; ion implantation; microwave materials; oxygen; submillimetre wave generation; GaAs:O; GaAs:O materials; continuous-wave generation; dipole antenna; emitter fabrication; frequency 0.25 THz to 0.5 THz; oxygen implantation; subterahertz wave generation; terahertz wave emitter; Biomedical measurements; Dipole antennas; Extraterrestrial measurements; Fabrication; Frequency; Gallium arsenide; Power generation; Power measurement; Sampling methods; Substrates;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391124
