Title :
Emerging memory technologies: Challenges and opportunities
Author :
DeSalvo, B. ; Sousa, V. ; Perniola, L. ; Jahan, C. ; Maitrejean, S. ; Nodin, J.F. ; Cagli, C. ; Jousseaume, V. ; Molas, G. ; Vianello, E. ; Charpin, C. ; Jalaguier, E.
Author_Institution :
LETI, MINATEC, Grenoble, France
Abstract :
In this paper, the evolution, limits and challenges of charge-storage Silicon Non Volatile Memory technologies are presented, with a special attention for 3D architectures. Then, new resistive memory technologies are introduced. Main principles, challenges and opportunities are discussed. In particular, an overview of our recent research work on phase change memory (PCM) and metal oxide resistive switching memory (OxRRAM) will be given.
Keywords :
memory architecture; phase change memories; 3D architectures; charge-storage silicon nonvolatile memory technologies; emerging memory technologies; metal oxide resistive switching memory; phase change memory; resistive memory technologies; Abstracts; Phase change materials; Random access memory; Reliability; Switches; Three dimensional displays;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2083-3
DOI :
10.1109/VLSI-TSA.2012.6210125
