DocumentCode :
2237766
Title :
Improvement of resistive switching memory parameters using IrOx Nanodots in high-κ AlOx Cross-Point
Author :
Banerjee, W. ; Maikap, S.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear :
2012
fDate :
23-25 April 2012
Firstpage :
1
Lastpage :
2
Abstract :
The improvement in resistive switching memory parameters by embedding IrOx nanodots in IrOx/AlOx/IrOx NDs/AlOx/W cross-point structure is reported. The fabricated memory devices exhibit MLC operation of both LRS and HRS, excellent read endurance of >;106 times, program/erase endurance of >;105 cycles, robust data retention of >;104s at 125°C with a small operation voltage of ±2V and a low CC of <;200 μA.
Keywords :
aluminium compounds; electrical resistivity; iridium compounds; nanoelectronics; random-access storage; switching circuits; HRS; IrO-AlO-IrO; LRS; MLC operation; cross-point structure; data retention; erase endurance; fabricated memory device; high-κ cross-point; nanodots; read endurance; resistive switching RAM device; resistive switching memory parameter; temperature 125 C; Electrodes; Neodymium; Performance evaluation; Resistance; Switches; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1930-8868
Print_ISBN :
978-1-4577-2083-3
Type :
conf
DOI :
10.1109/VLSI-TSA.2012.6210126
Filename :
6210126
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2237766
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