• DocumentCode
    2237766
  • Title

    Improvement of resistive switching memory parameters using IrOx Nanodots in high-κ AlOx Cross-Point

  • Author

    Banerjee, W. ; Maikap, S.

  • Author_Institution
    Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
  • fYear
    2012
  • fDate
    23-25 April 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The improvement in resistive switching memory parameters by embedding IrOx nanodots in IrOx/AlOx/IrOx NDs/AlOx/W cross-point structure is reported. The fabricated memory devices exhibit MLC operation of both LRS and HRS, excellent read endurance of >;106 times, program/erase endurance of >;105 cycles, robust data retention of >;104s at 125°C with a small operation voltage of ±2V and a low CC of <;200 μA.
  • Keywords
    aluminium compounds; electrical resistivity; iridium compounds; nanoelectronics; random-access storage; switching circuits; HRS; IrO-AlO-IrO; LRS; MLC operation; cross-point structure; data retention; erase endurance; fabricated memory device; high-κ cross-point; nanodots; read endurance; resistive switching RAM device; resistive switching memory parameter; temperature 125 C; Electrodes; Neodymium; Performance evaluation; Resistance; Switches; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1930-8868
  • Print_ISBN
    978-1-4577-2083-3
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2012.6210126
  • Filename
    6210126
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2237766