Title :
Improved 20 V lateral trench gate power MOSFETs with very low on-resistance of 7.8 mΩ·mm2
Author :
Nakagawa, Alao ; Kawaguchi, Yuki
Author_Institution :
Adv. Discrete Semicond. Technol. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
We propose an improved lateral trench gate MOSFET with a new trench drain contact. The device is predicted to achieve 25 V breakdown voltage and a very low on-resistance of 7.8 mΩ·mm2 , which is by 20% lower than that of previously proposed standard lateral trench gate MOSFETs. The proposed trench contact uniformly distributes the electron current in the drift layer, and effectively reduces the device on-resistance. In the present paper, we also show the detailed electrical characteristics of the fabricated standard trench gate LDMOS. The large current turn-off capability of 1.1×104 A/cm2 was achieved by the fabricated device
Keywords :
power MOSFET; 20 V; LDMOS device; breakdown voltage; current turn-off; electrical characteristics; lateral trench gate power MOSFET; on-resistance; trench drain contact; Application software; CMOS process; Computer peripherals; Contacts; Electric variables; Electrons; Laboratories; MOSFETs; Metalworking machines;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856770
