Title :
Body effect induced variability in Bulk tri-gate MOSFETs
Author :
Chun-Hsien Chiang ; Ming-Long Fan ; Kuo, J.J.-Y. ; Pin Su
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We investigate and report the body-effect induced variability in Bulk tri-gate MOSFETs. Through 3-D atomistic simulation, the random dopant fluctuations in the Punch-Through-Stopper (PTS) region of Bulk tri-gate devices are examined. Our study indicates that to achieve an efficient threshold-voltage modulation through substrate bias, the high-doping PTS region may introduce excess variation in Bulk tri-gate devices. This effect has to be considered when one-to-one comparisons between Bulk tri-gate and SOI tri-gate regarding device variability are made.
Keywords :
MOSFET; semiconductor doping; silicon-on-insulator; simulation; 3D atomistic simulation; PTS region; SOI; body effect induced variability; bulk tri-gate MOSFET; punch-through-stopper region; random dopant fluctuations; Capacitance; Doping; MOSFETs; Semiconductor process modeling; Solid modeling; Substrates; Threshold voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2083-3
DOI :
10.1109/VLSI-TSA.2012.6210130
