Title :
Analysis of the forward biased safe operating area of the super junction MOSFET
Author :
Zhang, Bo ; Xu, Zhenxue ; Huang, Alex Q.
Author_Institution :
Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
In this paper, the forward biased safe operating area (FBSOA) of the super junction MOSPET (also called CoolMOS) is studied. The FBSOA of a 600-V CoolMOS transistor-SPP20N60S5 is experimentally obtained. The FBSOA characteristic and the FBSOA failure mechanisms are analyzed in detail with the help of numerical simulations. The impact of the charge imbalance on the FBSOA is also studied in this work
Keywords :
power MOSFET; 600 V; CoolMOS transistor; SPP20N60S5; charge imbalance; forward biased safe operating area; numerical simulation; super junction MOSFET; Breakdown voltage; Circuit testing; Doping; Electrodes; Failure analysis; MOSFET circuits; Numerical simulation; Power MOSFET; Power electronics; Pulse circuits;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856773
