Experimental results and simulation analysis of 250 V super trench power MOSFET (STM)

Author

Nitta, T. ; Minato, T. ; Yano, M. ; Uenisi, A. ; Harada, M. ; Hine, S.

Author_Institution

ULSI Dev. Center, Mitsubishi Electr. Corp., Kamamoto, Japan

fYear

2000

fDate

2000

Firstpage

77

Lastpage

80

Abstract

We propose a new structure of power MOSFET, i.e. Super Trench power MOSFET (STM). Instead of a conventional n-drift layer, STM has vertical P and N layers formed within mesa regions between adjacent trenches filled with insulator. The P and N stripe structure relaxes the electric field in off-state and makes possible a lower specific on-resistance (Ron, sp) than that of the conventional MOSFET. We fabricated a 250 V STM for the first time with only one additional mask over the conventional DMOS process, and the measured data show high breakdown voltage with highly doped n drift layer. The device simulation results show it should be possible to lower the Ron, sp to 5 mΩcm ² for a breakdown voltage of 300 V

Keywords

ion implantation; power MOSFET; semiconductor device breakdown; semiconductor device models; 250 V; 250 V super trench power MOSFET; 300 V; adjacent trenches; breakdown voltage; electric field; high breakdown voltage; lower specific on-resistance; mesa regions; off-state; stripe structure; vertical P and N layers; Analytical models; Fabrication; Impurities; Insulation; Ion implantation; MOSFET circuits; Periodic structures; Power MOSFET; Time measurement; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Conference_Location

Toulouse

ISSN

1063-6854

Print_ISBN

0-7803-6269-1

Type

conf

DOI

10.1109/ISPSD.2000.856777

Filename

856777