Title :
Trench corner rounding technology using hydrogen annealing for highly reliable trench DMOSFETs
Author :
Sang-Gi Kim ; Kim, Sang-Gi ; Koo, Jin Gun ; Nam, Kee So0 ; Cho, Kyoung-Ik
Author_Institution :
Micro-Electron. Technol. Lab., ETRI, Taejon, South Korea
Abstract :
A new trench corner rounding technique has been developed by using pull-back and hydrogen annealing process. This technique provides highly controllable trench corner rounding by micro structure transformation of silicon at the corner of the trench, leading to uniform gate oxide, higher breakdown voltage, and lower leakage current
Keywords :
MOSFET; annealing; leakage currents; semiconductor device breakdown; semiconductor device reliability; H; H annealing; higher breakdown voltage; highly reliable trench DMOSFETs; lower leakage current; micro structure transformation; pull-back; trench corner rounding technology; uniform gate oxide; Dry etching; Hydrogen; Isolation technology; Magnetic materials; Plasma chemistry; Rapid thermal annealing; Rough surfaces; Silicon; Surface morphology; Surface roughness;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856779
