DocumentCode
2238015
Title
Trench corner rounding technology using hydrogen annealing for highly reliable trench DMOSFETs
Author
Sang-Gi Kim ; Kim, Sang-Gi ; Koo, Jin Gun ; Nam, Kee So0 ; Cho, Kyoung-Ik
Author_Institution
Micro-Electron. Technol. Lab., ETRI, Taejon, South Korea
fYear
2000
fDate
2000
Firstpage
87
Lastpage
90
Abstract
A new trench corner rounding technique has been developed by using pull-back and hydrogen annealing process. This technique provides highly controllable trench corner rounding by micro structure transformation of silicon at the corner of the trench, leading to uniform gate oxide, higher breakdown voltage, and lower leakage current
Keywords
MOSFET; annealing; leakage currents; semiconductor device breakdown; semiconductor device reliability; H; H annealing; higher breakdown voltage; highly reliable trench DMOSFETs; lower leakage current; micro structure transformation; pull-back; trench corner rounding technology; uniform gate oxide; Dry etching; Hydrogen; Isolation technology; Magnetic materials; Plasma chemistry; Rapid thermal annealing; Rough surfaces; Silicon; Surface morphology; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location
Toulouse
ISSN
1063-6854
Print_ISBN
0-7803-6269-1
Type
conf
DOI
10.1109/ISPSD.2000.856779
Filename
856779
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