• DocumentCode
    2238137
  • Title

    Novel power MOS devices with SiGe/Si heterojunctions

  • Author

    Li, Ping ; Su, Yajuan ; You, Mengsi ; Li, Xuening

  • Author_Institution
    Res. Inst. of Microelectron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    109
  • Lastpage
    112
  • Abstract
    Two types of novel power MOS devices with SiGe/Si heterojunctions are proposed and verified for the first time. The SiGe source RMOS has the characteristics of BVds=BVce0=BVcb0 which implies that the performance limitation of a Si RMOS can be overcome. The SiGe anode LIGBT has better performance than the SINFET, but does not have the shortcomings of the latter
  • Keywords
    Ge-Si alloys; elemental semiconductors; insulated gate bipolar transistors; power MESFET; power bipolar transistors; semiconductor heterojunctions; semiconductor materials; silicon; SINFET; SiGe anode LIGBT; SiGe-Si; heterojunctions; power MOS devices; Anodes; Bipolar transistors; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; MOS devices; Mobile communication; Photonic band gap; Power engineering and energy; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
  • Conference_Location
    Toulouse
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-6269-1
  • Type

    conf

  • DOI
    10.1109/ISPSD.2000.856784
  • Filename
    856784
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2238137