DocumentCode :
2238137
Title :
Novel power MOS devices with SiGe/Si heterojunctions
Author :
Li, Ping ; Su, Yajuan ; You, Mengsi ; Li, Xuening
Author_Institution :
Res. Inst. of Microelectron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2000
fDate :
2000
Firstpage :
109
Lastpage :
112
Abstract :
Two types of novel power MOS devices with SiGe/Si heterojunctions are proposed and verified for the first time. The SiGe source RMOS has the characteristics of BVds=BVce0=BVcb0 which implies that the performance limitation of a Si RMOS can be overcome. The SiGe anode LIGBT has better performance than the SINFET, but does not have the shortcomings of the latter
Keywords :
Ge-Si alloys; elemental semiconductors; insulated gate bipolar transistors; power MESFET; power bipolar transistors; semiconductor heterojunctions; semiconductor materials; silicon; SINFET; SiGe anode LIGBT; SiGe-Si; heterojunctions; power MOS devices; Anodes; Bipolar transistors; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; MOS devices; Mobile communication; Photonic band gap; Power engineering and energy; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
ISSN :
1063-6854
Print_ISBN :
0-7803-6269-1
Type :
conf
DOI :
10.1109/ISPSD.2000.856784
Filename :
856784
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2238137
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