DocumentCode
2238150
Title
An investigation of the structural and thermal transfer characteristics of commercial power MOSFET devices using experimental and modelling techniques
Author
Pritchard, L.S. ; Johnson, C.M. ; Acarnley, P.P. ; Horsfall, A.B.
Author_Institution
Newcastle upon Tyne Univ., UK
fYear
2002
fDate
4-7 June 2002
Firstpage
562
Lastpage
567
Abstract
This paper presents the results of an investigation into the structural and electrothermal properties of a group of commercial power MOSFET devices. Variations between devices of the same type designation were examined using electrothermal measurements, microscopic analysis and mathematical simulation techniques. Transient electrical measurements demonstrate significant differences in the semiconductor die temperature, supported by observed variations in structure and thermal modelling results.
Keywords
heat transfer; power MOSFET; semiconductor device measurement; semiconductor device models; semiconductor device testing; structural engineering; thermal analysis; electrothermal measurements; electrothermal properties; mathematical simulation; microscopic analysis; power MOSFET devices; semiconductor die temperature; structural properties; transient electrical measurements;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics, Machines and Drives, 2002. International Conference on (Conf. Publ. No. 487)
ISSN
0537-9989
Print_ISBN
0-85296-747-0
Type
conf
DOI
10.1049/cp:20020178
Filename
1031754
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