An advanced FWD design concept with superior soft reverse recovery characteristics

Author

Nemoto, Michio ; Nishiura, Akira ; Naito, Tatsuya ; Kirisawa, Mitsuaki ; Otsuki, Masahito ; Seki, Yasukazu

Author_Institution

Fuji Electr. Co. Ltd., Nagano, Japan

fYear

2000

fDate

2000

Firstpage

119

Lastpage

122

Abstract

In this paper an improved FWD design concept has been investigated having superior soft reverse recovery behavior, for the first time. The basic concept of the FWD design is a combination of low anode injection efficiency (MPS structure) and inhomogeneous lifetime controlling (platinum) in order to achieve the optimum carrier distributions. From experimental results, the rate of the rise in the cathode voltage (dV/dt) can be dramatically reduced. The new diode exhibits superior characteristics of the soft recovery than that of the conventional MPS diode, especially in the low current turn-on of the IGBT

Keywords

Schottky diodes; insulated gate bipolar transistors; p-i-n diodes; power semiconductor diodes; 125 degC; 20 degC; IGBT; MPS diode; anode injection efficiency; carrier distribution; cathode voltage; free wheeling diodes; inhomogeneous lifetime control; low current turn-on; merged PiN/Schottky diode; soft reverse recovery characteristics; Anodes; Cathodes; Gold; Helium; Insulated gate bipolar transistors; Multichip modules; Platinum; Schottky barriers; Schottky diodes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Conference_Location

Toulouse

ISSN

1063-6854

Print_ISBN

0-7803-6269-1

Type

conf

DOI

10.1109/ISPSD.2000.856786

Filename

856786