Title :
An advanced FWD design concept with superior soft reverse recovery characteristics
Author :
Nemoto, Michio ; Nishiura, Akira ; Naito, Tatsuya ; Kirisawa, Mitsuaki ; Otsuki, Masahito ; Seki, Yasukazu
Author_Institution :
Fuji Electr. Co. Ltd., Nagano, Japan
Abstract :
In this paper an improved FWD design concept has been investigated having superior soft reverse recovery behavior, for the first time. The basic concept of the FWD design is a combination of low anode injection efficiency (MPS structure) and inhomogeneous lifetime controlling (platinum) in order to achieve the optimum carrier distributions. From experimental results, the rate of the rise in the cathode voltage (dV/dt) can be dramatically reduced. The new diode exhibits superior characteristics of the soft recovery than that of the conventional MPS diode, especially in the low current turn-on of the IGBT
Keywords :
Schottky diodes; insulated gate bipolar transistors; p-i-n diodes; power semiconductor diodes; 125 degC; 20 degC; IGBT; MPS diode; anode injection efficiency; carrier distribution; cathode voltage; free wheeling diodes; inhomogeneous lifetime control; low current turn-on; merged PiN/Schottky diode; soft reverse recovery characteristics; Anodes; Cathodes; Gold; Helium; Insulated gate bipolar transistors; Multichip modules; Platinum; Schottky barriers; Schottky diodes; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856786
