Title :
On the amplitude of random telegraph noise
Author :
Cheung, Kin P. ; Campbell, J.P. ; Potbhare, S. ; Oates, A.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
A simple physical model is developed to show that the “hole-in-the-inversion-layer” model for RTN is in fact correct. This simple model allows RTN amplitude for future devices to be predicted intuitively and quantitatively. The model provides additional incite into the physics of RTN in MOSFETs.
Keywords :
MOSFET; semiconductor device noise; MOSFET; RTN amplitude; hole-in-the-inversion-layer model; physical model; random telegraph noise; Dielectrics; Equations; Fluctuations; Logic gates; Mathematical model; Noise; Semiconductor process modeling;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2083-3
DOI :
10.1109/VLSI-TSA.2012.6210145
