Title :
High voltage driver built in a low voltage 0.18 μm CMOS for cache redundancy applications in microprocessors
Author :
Bergemont, Albert ; Saadat, Irfan ; Francis, Pascale ; Pichler, Christoph ; Haggag, Hosam ; Kalnitsky, Alexander
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
The manufacturability and integration of a high voltage driver transistor built in a 0.18 μm CMOS process is demonstrated and evaluated. This paper addresses the driver circuit challenges for fuse programming. Given the low operating voltage nature of the 0.18 μm technology, this driver still delivers the required programming energy, yet complying with low voltage limitation of the technology. This transistor is based on extended drain approach and does not require additional masking steps for manufacturing. The transistor is capable of operating up to Vd=15 V and Idsat/W=250 μA/μm at Vg=1.8 V. The reliability of this high voltage driver is also addressed
Keywords :
CMOS analogue integrated circuits; cache storage; driver circuits; integrated circuit reliability; microprocessor chips; power integrated circuits; 0.18 mum; 1.8 V; cache redundancy applications; extended drain; fuse programming; high voltage driver transistor; low voltage CMOS; manufacturability; microprocessors; reliability; CMOS process; CMOS technology; Driver circuits; Fuses; Immune system; Low voltage; Manufacturing processes; Microprocessors; Redundancy; Semiconductor device manufacture;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856789
