High voltage driver built in a low voltage 0.18 μm CMOS for cache redundancy applications in microprocessors

Author

Bergemont, Albert ; Saadat, Irfan ; Francis, Pascale ; Pichler, Christoph ; Haggag, Hosam ; Kalnitsky, Alexander

Author_Institution

Nat. Semicond. Corp., Santa Clara, CA, USA

fYear

2000

fDate

2000

Firstpage

133

Lastpage

136

Abstract

The manufacturability and integration of a high voltage driver transistor built in a 0.18 μm CMOS process is demonstrated and evaluated. This paper addresses the driver circuit challenges for fuse programming. Given the low operating voltage nature of the 0.18 μm technology, this driver still delivers the required programming energy, yet complying with low voltage limitation of the technology. This transistor is based on extended drain approach and does not require additional masking steps for manufacturing. The transistor is capable of operating up to V_d=15 V and I_dsat/W=250 μA/μm at Vg=1.8 V. The reliability of this high voltage driver is also addressed

Keywords

CMOS analogue integrated circuits; cache storage; driver circuits; integrated circuit reliability; microprocessor chips; power integrated circuits; 0.18 mum; 1.8 V; cache redundancy applications; extended drain; fuse programming; high voltage driver transistor; low voltage CMOS; manufacturability; microprocessors; reliability; CMOS process; CMOS technology; Driver circuits; Fuses; Immune system; Low voltage; Manufacturing processes; Microprocessors; Redundancy; Semiconductor device manufacture;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Conference_Location

Toulouse

ISSN

1063-6854

Print_ISBN

0-7803-6269-1

Type

conf

DOI

10.1109/ISPSD.2000.856789

Filename

856789