Title :
A SOI LDMOS/CMOS/BJT technology for fully-integrated RF power amplifiers
Author :
Tan, Yue ; Kumar, Mahender ; Sin, Johnny K O ; Shi, Longxing ; Lau, Jack
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
This paper describes a SOI LDMOS/CMOS/BJT technology which can be used in portable wireless communication applications. This technology allows the complete integration of the front-end and baseband circuits for low-cost/low-power/high-volume single-chip transceiver implementation. The LDMOS transistors (0.35 μm channel length, 3.8 μm drift length, 4.5 GHz fT and 20 V breakdown voltage), CMOS transistors (1.5 μm channel length, 0.8/-1.2V threshold voltage), lateral NPN transistor (18 V BVCBO and hFE of 20), and high Q-factor (up to 6.1 at 900 MHz and 6.5 at 1.8 GHz) on-chip inductors are fabricated. A fully-functional high performance integrated power amplifier for 900 MHz wireless transceiver application is also demonstrated
Keywords :
BIMOS integrated circuits; MOSFET; UHF bipolar transistors; UHF integrated circuits; UHF power amplifiers; silicon-on-insulator; transceivers; 0.35 mum; 0.8 to 1.2 V; 1.5 mum; 1.8 GHz; 20 V; 4.5 GHz; 900 MHz; CMOS transistors; LDMOS transistors; Q-factor; SOI LDMOS/CMOS/BJT technology; breakdown voltage; channel length; front end-baseband circuits integration; fully-integrated RF power amplifiers; lateral NPN transistor; on-chip inductors; portable wireless communication; single-chip transceiver; threshold voltage; wireless transceiver; Baseband; CMOS technology; Circuits; Inductors; Iron; Q factor; Radio frequency; Threshold voltage; Transceivers; Wireless communication;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856790
